BS ISO 26432-2-2008 数字资源处理.数字电影(D-电影)低频效果(LFE)信道的音频特性

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【英文标准名称】:Digitalsourceprocessing-Digitalcinema(D-cinema)lowfrequencyeffects(LFE)channelaudiocharacteristics
【原文标准名称】:数字资源处理.数字电影(D-电影)低频效果(LFE)信道的音频特性
【标准号】:BSISO26432-2-2008
【标准状态】:现行
【国别】:英国
【发布日期】:2009-04-30
【实施或试行日期】:2009-04-30
【发布单位】:英国标准学会(GB-BSI)
【起草单位】:BSI
【标准类型】:()
【标准水平】:()
【中文主题词】:电影院;兼容性;可混用性;计算机制图;计算机绘图;数据处理;数字数据;数字工程;反馈;过滤器;频率;图像处理;信息技术;交替使用性;LF;低频;电影技术;重放设备
【英文主题词】:Cinemas;Compatibility;Computergraphics;Dataprocessing;Digitaldata;Digitalengineering;Feedback;Filters;Frequencies;Imageprocessing;Informationtechnology;Interoperability;LF;Lowfrequencies;Motion-picturetechnics;Reproductingequipment
【摘要】:
【中国标准分类号】:M63
【国际标准分类号】:37_060_99
【页数】:12P;A4
【正文语种】:英语


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【英文标准名称】:Electroacoustics-Simulatorsofhumanheadandear-Part6:Mechanicalcouplerforthemeasurementsonbonevibrators(IEC60318-6:2007);GermanversionEN60318-6:2008
【原文标准名称】:电声学.人类头部和耳朵的模拟器.第6部分:骨传导振动器的测量用机械耦合器
【标准号】:EN60318-6-2008
【标准状态】:现行
【国别】:
【发布日期】:2009-02
【实施或试行日期】:2009-02-01
【发布单位】:欧洲标准学会(EN)
【起草单位】:
【标准类型】:()
【标准水平】:()
【中文主题词】:声学;仿真乳突;听力测定;骨导体;骨传导振动器;校准;耦合器;定义;设计;电气工程;电声学;频率;频率范围;助听器;阻抗;使用说明书;作标记;测量;医疗技术学;规范;标准夹具
【英文主题词】:Acoustics;Artificialmastoids;Audiometry;Boneconductors;Bonevibrator;Calibration;Couplers;Definition;Definitions;Design;Electricalengineering;Electroacoustics;Frequencies;Frequencyranges;Hearingaids;Impedance;Instructionsforuse;Marking;Measurement;Medicaltechnology;Specification;Standardfixtures
【摘要】:
【中国标准分类号】:L31
【国际标准分类号】:17_140_50
【页数】:17P.;A4
【正文语种】:英语


【英文标准名称】:Electronicdesignautomationlibraries-Part3:ModelsofintegratedcircuitsforEMIbehaviouralsimulation
【原文标准名称】:电子设计自动化程序库.第3部分:EMI行为模拟用集成电路的模型
【标准号】:IEC/TR62014-3-2002
【标准状态】:现行
【国别】:国际
【发布日期】:2002-12
【实施或试行日期】:
【发布单位】:国际电工委员会(IEC)
【起草单位】:IEC/TC93
【标准类型】:()
【标准水平】:()
【中文主题词】:输入;数字集成电路;电子设备及元件;电子设备及元件;规范(验收);集成电路;数字电路;定义;自动化
【英文主题词】:digitalintegratedcircuits;automation;emi;electronicequipmentandcomponents;input;integratedcircuits;definition;digitalcircuits;definitions;specification(approval)
【摘要】:TheobjectiveofthisTechnicalReport(TR)ICEM(IntegratedCircuitElectricalModel)forComponentsistoproposeelectricalmodellingforintegratedcircuitinternalactivities.Thismodelwillbeusedtoevaluateelectromagneticbehaviourandperformancesofelectronicequipment.1GeneralIntegratedcircuitsintegratemoreandmoregatesonsiliconandthetechnologiesarefasterandfaster.Topredicttheelectromagneticbehaviourofequipment,itisrequiredtomodelICinterfaceswitchingandtheirinternalactivitiesaswell.IndeedIBISandIMICmodelsarefocusedmainlyoninterfaceactivitypredictions(cross-talk,overshoot,etc.).SeeIEC62014-1.ThisreportdescribesamodelforEMIsimulationduetoICinternalactivities.Thismodelgivesmoreaccuratelytheelectromagneticemissionsofelectronicequipmentbytakingintoaccounttheinfluenceofinternalactivities.ThismodelgivesgeneraldatawhichcouldbeimplementedindifferentformatsuchasIBIS,IMIC,SPICE,etc.DuringthedesignstageoftheapplicationthatwillexploittheIC,itbecomesusefultopredictandtopreventelectromagneticriskswiththeCADtool.AccurateICmodellingisnecessarytorunonthesesimulationtools.Threecouplingmechanismsoftheinternalactivitiesforemission(Figure1)areproposedintheICEMmodel:·conductedemissionsthroughsupplylines;·conductedemissionsthroughinput/outputlines;·directradiatedemissions.Thisreportproposesamodelthataddressesthosethreetypesofcouplinginasingleapproach.Theelementsofthemodelwouldbekeptassimpleaspossibletoeasetheidentificationandsimulationprocess.2PhilosophyThepurposeofthisreportistoprovidedatatoenableprinted-circuit-boardlevel(PCB)electromagnetictoolstocomputetheelectromagneticfieldsproducedbyintegratedcircuitsandtheirassociatedPCB.Thesedatacanbeextractedfrommeasurementmethods,asdescribedinIEC61967,orobtainedfromICsimulationtools.2.1OriginofparasiticemissionTheoriginofparasiticemissioninICisduetothecurrentflowingthroughalltheICgates(IvandIv)duringhightoloworlowtohightransitionsasshowninFigure2.Thecombinationofseveralhundredthousandsofgatesleadtoveryimportantpeaksofcurrent,mainlyatriseandfalledgesoftheclockcircuit.ForexampleFigure3plotsthenumberofgatesswitchingversusthetimeforanICintegrating1000000transistors.Consequently,highcurrentspikesarecreatedinsidethedieandinducevoltagedropsoftheinternalvoltagereferences.2.2Conductedemissionthroughpower-supplylinesThecurrentspikescreatedinsidethediearepartiallyreducedthankstotheon-chipdecouplingcapacitance.Anyhow,asignificantportionofthecurrentspikesispresentatthepower-supplypinsofthechip.ThiscurrentcouldbemeasuredaccordingtoIEC61967orothermethodspermittingtohavethepower-supplycurrents.2.3Conductedemissionsthroughinput/outputlines(I/O)TheinternalvoltagedropsgeneratedbythecurrentspikescreatenoiseontheI/Osthroughdirectconnection,parasiticcapacitiveandinductivecouplingsand/orthroughcommonimpedance.ThePCBwiresconnectedtotheI/Ocanactasantennasandpropagateelectromagneticemissions.Themeasurementset-upisdoneaccordingtoIEC61967.2.4DirectradiatedemissionsTheinternalcurrentflowinginlowimpedanceloopsgenerateselectromagneticfieldswhichcanbemeasuredinnearfieldaccordingtoIEC61967.
【中国标准分类号】:L77
【国际标准分类号】:35_240_50;31_200;25_040_01
【页数】:20P.;A4
【正文语种】:英语